NCD Diamond Semiconductor System for Advanced Power Electronics Systems Integration : CRADA report
- AKHAN Semiconductor, Inc., Hoffman Estates, IL (United States)
The integration of 2D materials such as molybdenum disulphide (MoS2) with diamond (3D) was achieved by forming an heterojunction between these two materials and its electrical performance was studied experimentally. The device charactertics did show good rectifying nature when p-type single crystal diamond was integrated with n-type MoS2. These results are very encouraging indicating possible applications in semiconductor electronics, however further studies are required for a detailed understanding of the transport phenomena at the MoS2/diamond interface.
- Research Organization:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE; AKHAN Technologies, Inc.
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1326956
- Report Number(s):
- ANL/NST-C1400701; 130610
- Country of Publication:
- United States
- Language:
- English
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