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Title: Geometric Aspects of GaN Crystallographic Etching and Photonic Applications.

Conference ·
OSTI ID:1326350

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1326350
Report Number(s):
SAND2015-8021C; 603904
Resource Relation:
Conference: Proposed for presentation at the CINT User Meerting held September 21-22, 2015 in Santa Fe, NM.
Country of Publication:
United States
Language:
English