Negative transconductance and gate position dependent behavior in axial-doped NPN SiGe nanowire transistors.
Conference
·
OSTI ID:1325908
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1325908
- Report Number(s):
- SAND2015-7942C; 603837
- Resource Relation:
- Conference: Proposed for presentation at the User Meeting.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors.
Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.
Conference
·
Wed May 01 00:00:00 EDT 2019
·
OSTI ID:1325908
+1 more
Position-Dependent Transport of n-p-n Junctions in Axially Doped SiGe Nanowire Transistors
Journal Article
·
Mon Mar 18 00:00:00 EDT 2019
· IEEE Electron Device Letters
·
OSTI ID:1325908
+1 more
Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.
Conference
·
Sun Jun 01 00:00:00 EDT 2008
·
OSTI ID:1325908
+7 more