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Title: A new silicon phase with direct band gap and novel optoelectronic properties

Abstract

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.

Authors:
 [1];  [2];  [3];  [4]
  1. Peking Univ., Beijing (China); Key Lab. of High Energy Density Physics Simulation, and IFSA Collaborative Innovation Center, Ministry of Education, Beijing (China)
  2. Peking Univ., Beijing (China); Key Lab. of High Energy Density Physics Simulation, and IFSA Collaborative Innovation Center, Ministry of Education, Beijing (China); Virginia Commonwealth Univ., Richmond, VA (United States)
  3. Tohoku Univ., Sendai (Japan); Kutateladze Institute of Thermophysics, Novosibirsk (Russia)
  4. Virginia Commonwealth Univ., Richmond, VA (United States)
Publication Date:
Research Org.:
Virginia Commonwealth Univ., Richmond, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1324969
Grant/Contract Number:  
FG02-96ER45579
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; condensed-matter physics; theory and computation

Citation Formats

Guo, Yaguang, Wang, Qian, Kawazoe, Yoshiyuki, and Jena, Puru. A new silicon phase with direct band gap and novel optoelectronic properties. United States: N. p., 2015. Web. doi:10.1038/srep14342.
Guo, Yaguang, Wang, Qian, Kawazoe, Yoshiyuki, & Jena, Puru. A new silicon phase with direct band gap and novel optoelectronic properties. United States. https://doi.org/10.1038/srep14342
Guo, Yaguang, Wang, Qian, Kawazoe, Yoshiyuki, and Jena, Puru. 2015. "A new silicon phase with direct band gap and novel optoelectronic properties". United States. https://doi.org/10.1038/srep14342. https://www.osti.gov/servlets/purl/1324969.
@article{osti_1324969,
title = {A new silicon phase with direct band gap and novel optoelectronic properties},
author = {Guo, Yaguang and Wang, Qian and Kawazoe, Yoshiyuki and Jena, Puru},
abstractNote = {Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. Additionally, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making it a promising material for optoelectronic applications.},
doi = {10.1038/srep14342},
url = {https://www.osti.gov/biblio/1324969}, journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 5,
place = {United States},
year = {Wed Sep 23 00:00:00 EDT 2015},
month = {Wed Sep 23 00:00:00 EDT 2015}
}

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Cited by: 73 works
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