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This content will become publicly available on December 29, 2016

Title: Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1×10–26 cm6/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K•p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. In conclusion, the experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Illinois, Chicago, IL (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0003-6951; APPLAB; 616459
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 26; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY III-V semiconductors; superlattices; band gap; carrier lifetimes; carrier density