Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

Olson, B. V.; Grein, C. H.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Shaner, E. A.

doi:10.1063/1.4939147

Title: Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

Journal Article · Tue Dec 29 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4939147· OSTI ID:1323900

^[1]; Grein, C. H. ^[2]; Kim, J. K. ^[1]; Kadlec, E. A. ^[1]; Klem, J. F. ^[1]; Hawkins, S. D. ^[1]; Shaner, E. A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Illinois, Chicago, IL (United States)

The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1×10^–26 cm⁶/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K•p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. In conclusion, the experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1323900

Report Number(s):: SAND-2015-11141J; APPLAB; 616459

Journal Information:: Applied Physics Letters, Vol. 107, Issue 26; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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References (25)

“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance? Tennant, W. E. Journal of Electronic Materials, Vol. 39, Issue 7 https://doi.org/10.1007/s11664-010-1084-9	journal	February 2010
Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe Rhiger, David R. Journal of Electronic Materials, Vol. 40, Issue 8 https://doi.org/10.1007/s11664-011-1653-6	journal	May 2011
Strained and Unstrained Layer Superlattices for Infrared Detection Grein, C. H.; Garland, J.; Flatté, M. E. Journal of Electronic Materials, Vol. 38, Issue 8 https://doi.org/10.1007/s11664-009-0757-8	journal	March 2009
Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen Applied Physics Letters, Vol. 97, Issue 25 https://doi.org/10.1063/1.3529458	journal	December 2010
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials Donetsky, Dmitry; Belenky, Gregory; Svensson, Stefan Applied Physics Letters, Vol. 97, Issue 5 https://doi.org/10.1063/1.3476352	journal	August 2010
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4749842	journal	August 2012
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms Höglund, L.; Ting, D. Z.; Soibel, A. Applied Physics Letters, Vol. 105, Issue 19 https://doi.org/10.1063/1.4902022	journal	November 2014
Intensity- and Temperature-Dependent Carrier Recombination in $InAs / In {As}_{1 - x} {S b}_{x}$ Type-II Superlattices Olson, B. V.; Kadlec, E. A.; Kim, J. K. Physical Review Applied, Vol. 3, Issue 4 https://doi.org/10.1103/PhysRevApplied.3.044010	journal	April 2015
Minority carrier lifetimes in ideal InGaSb/InAs superlattices Grein, C. H.; Young, P. M.; Ehrenreich, H. Applied Physics Letters, Vol. 61, Issue 24 https://doi.org/10.1063/1.108480	journal	December 1992
Theoretical performance of very long wavelength InAs/In _x Ga ₁₋ _x Sb superlattice based infrared detectors Grein, C. H.; Cruz, H.; Flatté, M. E. Applied Physics Letters, Vol. 65, Issue 20 https://doi.org/10.1063/1.112626	journal	November 1994
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony Grein, C. H.; Flatté, M. E.; Olesberg, J. T. Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1521255	journal	December 2002
Auger lifetime enhancement in InAs–Ga _{1− x} In _x Sb superlattices Youngdale, E. R.; Meyer, J. R.; Hoffman, C. A. Applied Physics Letters, Vol. 64, Issue 23 https://doi.org/10.1063/1.111325	journal	June 1994
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Applied Physics Letters, Vol. 105, Issue 2 https://doi.org/10.1063/1.4890578	journal	July 2014
Suppression of Auger recombination in arsenic‐rich InAs _{1− x} Sb _x strained layer superlattices Ciesla, C. M.; Murdin, B. N.; Pidgeon, C. R. Journal of Applied Physics, Vol. 80, Issue 5 https://doi.org/10.1063/1.363157	journal	September 1996
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM Wood, M. R.; Kanedy, K.; Lopez, F. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.02.063	journal	September 2015
Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs _0.91 Sb _0.09 alloy nBn photodetectors Olson, B. V.; Kim, J. K.; Kadlec, E. A. Applied Physics Letters, Vol. 107, Issue 18 https://doi.org/10.1063/1.4935159	journal	November 2015
Quantum efficiency in InSb Beattie, Alan R. Journal of Physics and Chemistry of Solids, Vol. 23, Issue 8 https://doi.org/10.1016/0022-3697(62)90122-1	journal	August 1962
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes Grein, C. H.; Young, P. M.; Flatté, M. E. Journal of Applied Physics, Vol. 78, Issue 12 https://doi.org/10.1063/1.360422	journal	December 1995
Carrier recombination rates in narrow-gap ${I n A s / G a}_{1 - x} {In}_{x} Sb$ -based superlattices Flatté, Michael E.; Grein, C. H.; Hasenberg, T. C. Physical Review B, Vol. 59, Issue 8 https://doi.org/10.1103/PhysRevB.59.5745	journal	February 1999
Calculations of the commonly neglected terms in the matrix element for Auger and impact ionisation processes in semiconductors Brand, S.; Abram, R. A. Journal of Physics C: Solid State Physics, Vol. 17, Issue 22 https://doi.org/10.1088/0022-3719/17/22/007	journal	August 1984
Energy gap versus alloy composition and temperature in Hg _{1− x} Cd _x Te Hansen, G. L.; Schmit, J. L.; Casselman, T. N. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.330018	journal	October 1982
Interpreting mid-wave infrared MWIR HgCdTe photodetectors Tennant, W. E. Progress in Quantum Electronics, Vol. 36, Issue 2-3 https://doi.org/10.1016/j.pquantelec.2012.05.001	journal	March 2012
Infrared Detectors Rogalski, Antonio https://doi.org/10.1201/9781420022506	reference-book	January 2000
Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared Koerperick, Edwin J.; Norton, Dennis T.; Olesberg, Jonathon T. IEEE Journal of Quantum Electronics, Vol. 47, Issue 1 https://doi.org/10.1109/JQE.2010.2072492	journal	January 2011

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Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy Kanedy, K.; Lopez, F.; Wood, M. R. Applied Physics Letters, Vol. 112, Issue 4 https://doi.org/10.1063/1.5008865	journal	January 2018
Gold plasmonic material for enhanced Hg _1–x Cd _x Te infrared absorption Das, Naresh C.; Choi, K. K. AIP Advances, Vol. 9, Issue 10 https://doi.org/10.1063/1.5118363	journal	October 2019
Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials Nordin, L.; Li, K.; Briggs, A. Applied Physics Letters, Vol. 116, Issue 2 https://doi.org/10.1063/1.5132311	journal	January 2020
Recent advances in manufacturing of miniaturized uncooled IR detection modules Kalinowski, Przemysław; Mikołajczyk, Janusz; Piotrowski, Adam Semiconductor Science and Technology, Vol. 34, Issue 3 https://doi.org/10.1088/1361-6641/aaf458	journal	February 2019
Enhanced Emission from Ultra-Thin Long Wavelength Infrared Superlattices on Epitaxial Plasmonic Materials Simmons, E.; Nordin, L.; Li, K. CLEO: Applications and Technology, Conference on Lasers and Electro-Optics https://doi.org/10.1364/cleo_at.2020.jtu2d.12	conference	January 2020
Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits Dev, Sukrith; Wang, Yinan; Kim, Kyounghwan Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09602-2	journal	April 2019

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