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Title: Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging

Authors:
 [1];  [2];  [3];  [1];  [1];  [1];  [4];  [5];  [4];  [2];  [2];  [1]
  1. Fraunhofer Institute for Solar Energy Systems, Heidenhofstraβe 2, D-79110 Freiburg, Germany
  2. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  3. Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-713, South Korea
  4. FUTURE-PV Innovation, Koriyama, Fukushima 963-0215, Japan
  5. Kyoto University, Yoshida-Honmachi, Sakyo-Ku, Kyoto 606-8501, Japan
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1322422
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 120 Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Schön, Jonas, Youssef, Amanda, Park, Sungeun, Mundt, Laura E., Niewelt, Tim, Mack, Sebastian, Nakajima, Kazuo, Morishita, Kohei, Murai, Ryota, Jensen, Mallory A., Buonassisi, Tonio, and Schubert, Martin C. Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging. United States: N. p., 2016. Web. doi:10.1063/1.4961465.
Schön, Jonas, Youssef, Amanda, Park, Sungeun, Mundt, Laura E., Niewelt, Tim, Mack, Sebastian, Nakajima, Kazuo, Morishita, Kohei, Murai, Ryota, Jensen, Mallory A., Buonassisi, Tonio, & Schubert, Martin C. Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging. United States. https://doi.org/10.1063/1.4961465
Schön, Jonas, Youssef, Amanda, Park, Sungeun, Mundt, Laura E., Niewelt, Tim, Mack, Sebastian, Nakajima, Kazuo, Morishita, Kohei, Murai, Ryota, Jensen, Mallory A., Buonassisi, Tonio, and Schubert, Martin C. 2016. "Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging". United States. https://doi.org/10.1063/1.4961465.
@article{osti_1322422,
title = {Identification of lifetime limiting defects by temperature- and injection-dependent photoluminescence imaging},
author = {Schön, Jonas and Youssef, Amanda and Park, Sungeun and Mundt, Laura E. and Niewelt, Tim and Mack, Sebastian and Nakajima, Kazuo and Morishita, Kohei and Murai, Ryota and Jensen, Mallory A. and Buonassisi, Tonio and Schubert, Martin C.},
abstractNote = {},
doi = {10.1063/1.4961465},
url = {https://www.osti.gov/biblio/1322422}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 120,
place = {United States},
year = {Thu Sep 08 00:00:00 EDT 2016},
month = {Thu Sep 08 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1063/1.4961465

Citation Metrics:
Cited by: 20 works
Citation information provided by
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Works referenced in this record:

Imaging of chromium point defects in p-type silicon
journal, August 2010


Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging
journal, May 2011


Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method
journal, December 2014


Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
journal, April 2008


Imaging of Metastable Defects in Silicon
journal, October 2011


Rapid Thermal Processing and the Control of Oxygen Precipitation Behaviour in Silicon Wafers
journal, March 2008


Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
journal, January 2014


Improved quantitative description of Auger recombination in crystalline silicon
journal, October 2012


Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions
journal, February 2002


Shape and quality of Si single bulk crystals grown inside Si melts using the noncontact crucible method
journal, December 2014