Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

Han, Myung-Geun; Garlow, Joseph A.; Bugnet, Matthieu; Divilov, Simon; Marshall, Matthew S.  J.; Wu, Lijun; Dawber, Matthew; Fernandez-Serra, Marivi; Botton, Gianluigi A.; Cheong, Sang-Wook; Walker, Frederick J.; Ahn, Charles H.; Zhu, Yimei

doi:10.1103/PhysRevB.94.100101

Title: Coupling of bias-induced crystallographic shear planes with charged domain walls in ferroelectric oxide thin films

Journal Article · Fri Sep 02 00:00:00 EDT 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.94.100101· OSTI ID:1336196

Han, Myung-Geun ^[1]; Garlow, Joseph A. ^[2]; Bugnet, Matthieu ^[3]; Divilov, Simon ^[4]; Marshall, Matthew S. J. ^[5]; Wu, Lijun ^[1]; Dawber, Matthew ^[4]; Fernandez-Serra, Marivi ^[4]; Botton, Gianluigi A. ^[3]; Cheong, Sang-Wook ^[6]; Walker, Frederick J. ^[5]; Ahn, Charles H. ^[5]; Zhu, Yimei ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Stony Brook Univ., NY (United States). Dept. of Materials Science & Engineering
McMaster Univ., Hamilton, ON (Canada). Dept. of Materials Science and Engineering
Stony Brook Univ., NY (United States). Dept. of Physics and Astronomy
Yale Univ., New Haven, CT (United States). Center for Research on Interface Structures and Phenomena, Dept. of Applied Physics; Yale Univ., New Haven, CT (United States). Dept. of Mechanical Engineering and Materials Science
Rutgers Univ., Piscataway, NJ (United States). Rutgers Center for Emergent Materials, Dept. of Physics and Astronomy

Polar discontinuity at interfaces plays deterministic roles in charge transport, magnetism, and even superconductivity of functional oxides. To date, most polar discontinuity problems have been explored in hetero-interfaces between two dissimilar materials. Here, we show that charged domain walls (CDWs) in epitaxial thin films of ferroelectric PbZr_0.2Ti_0.8O₃ are strongly coupled to polar interfaces through the formation of ½<101>{h0l} type crystallographic shear planes (CSPs). Using atomic resolution imaging and spectroscopy we illustrate that the CSPs consist of both conservative and nonconservative segments when coupled to the CDWs, where necessary compensating charges for stabilizing the CDWs are associated with vacancies at the CSPs. Lasly, the CDW/CSP coupling yields an atomically narrow domain walls, consisting of a single atomic layer of oxygen. This study shows that the CDW/CSP coupling is a fascinating venue to develop emergent material properties.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Gordon and Betty Moore Foundation

Grant/Contract Number:: SC0012704; DMR119826; DMR1309868; DMR1334867; GBMF4413; DESC0012704

OSTI ID:: 1336196

Alternate ID(s):: OSTI ID: 1315857

Report Number(s):: BNL-113190-2016-JA; PRBMDO; R&D Project: MA015MACA; KC0201010

Journal Information:: Physical Review B, Vol. 94, Issue 10; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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