Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

Journal Article · Mon Nov 27 00:00:00 EST 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.114882· OSTI ID:130690

Blum, O; Hafich, M J; Klem, J F; Lear, K L ^[1]; Chu, S N.G. ^[2]

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1. Sandia National Laboratories, MS0603, P.O. Box 5800, Albuquerque, New Mexico 87185 (United States)
2. AT&T Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 {mu}m with a maximum reflectivity exceeding 99%. We also measure current--voltage characteristics in a similar 10 1/2 period {ital p}-type DBR and find that a current density of 1 {ital kA}/{ital cm}{sup 2} produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 130690
• Journal Information: Applied Physics Letters, Vol. 67, Issue 22; Other Information: PBD: 27 Nov 1995
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
MIRRORS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONIDES
BRAGG REFLECTION
CARRIER MOBILITY
ELECTRICAL PROPERTIES
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
REFLECTIVITY
SUPERLATTICES