Effects of domain size on x-ray absorption spectra of boron nitride doped graphenes

Li, Xin; Hua, Weijie; Wang, Bo-Yao; Pong, Way-Faung; Glans, Per-Anders; Guo, Jinghua; Luo, Yi

doi:10.1063/1.4961628

Title: Effects of domain size on x-ray absorption spectra of boron nitride doped graphenes

Journal Article · Thu Aug 25 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4961628· OSTI ID:1306685

Li, Xin ^[1];

^[2]; Wang, Bo-Yao ^[3]; Pong, Way-Faung ^[4]; Glans, Per-Anders ^[5]; Guo, Jinghua ^[6]; Luo, Yi ^[7]

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China, Department of Theoretical Chemistry and Biology, School of Biotechnology, KTH Royal Institute of Technology, S-10691 Stockholm, Sweden, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Department of Theoretical Chemistry and Biology, School of Biotechnology, KTH Royal Institute of Technology, S-10691 Stockholm, Sweden
Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
Department of Physics, Tamkang University, Tamsui 251, Taiwan
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Department of Chemistry and Biochemistry, University of California, Santa Cruz, California 95064, USA
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China, Department of Theoretical Chemistry and Biology, School of Biotechnology, KTH Royal Institute of Technology, S-10691 Stockholm, Sweden

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1306685

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 109 Journal Issue: 8; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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References (33)

Graphene and boron nitride lateral heterostructures for atomically thin circuitry Levendorf, Mark P.; Kim, Cheol-Joo; Brown, Lola Nature, Vol. 488, Issue 7413, p. 627-632 https://doi.org/10.1038/nature11408	journal	August 2012
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping Chang, Cheng-Kai; Kataria, Satender; Kuo, Chun-Chiang ACS Nano, Vol. 7, Issue 2 https://doi.org/10.1021/nn3049158	journal	January 2013
Thermodynamic interpretation of chemical shifts in core-electron binding energies Jolly, William L.; Hendrickson, David N. Journal of the American Chemical Society, Vol. 92, Issue 7 https://doi.org/10.1021/ja00710a012	journal	April 1970
X-ray absorption spectra of graphene from first-principles simulations Hua, Weijie; Gao, Bin; Li, Shuhua Physical Review B, Vol. 82, Issue 15 https://doi.org/10.1103/PhysRevB.82.155433	journal	October 2010
Heteroatom-doped graphene materials: syntheses, properties and applications Wang, Xuewan; Sun, Gengzhi; Routh, Parimal Chem. Soc. Rev., Vol. 43, Issue 20 https://doi.org/10.1039/C4CS00141A	journal	January 2014
NEXAFS Spectroscopy Stöhr, Joachim Springer Series in Surface Sciences https://doi.org/10.1007/978-3-662-02853-7	book	January 1992
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Development of the Colle-Salvetti correlation-energy formula into a functional of the electron density Lee, Chengteh; Yang, Weitao; Parr, Robert G. Physical Review B, Vol. 37, Issue 2 https://doi.org/10.1103/PhysRevB.37.785	journal	January 1988
Binary and Ternary Atomic Layers Built from Carbon, Boron, and Nitrogen Song, Li; Liu, Zheng; Reddy, Arava Leela Mohana Advanced Materials, Vol. 24, Issue 36 https://doi.org/10.1002/adma.201201792	journal	July 2012
Special points for Brillouin-zone integrations Monkhorst, Hendrik J.; Pack, James D. Physical Review B, Vol. 13, Issue 12, p. 5188-5192 https://doi.org/10.1103/PhysRevB.13.5188	journal	June 1976
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Selective nitrogen doping in graphene: Enhanced catalytic activity for the oxygen reduction reaction Wang, Xianlong; Hou, Zhufeng; Ikeda, Takashi Physical Review B, Vol. 84, Issue 24 https://doi.org/10.1103/PhysRevB.84.245434	journal	December 2011
Optoelectronic Properties in Monolayers of Hybridized Graphene and Hexagonal Boron Nitride Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C. Physical Review Letters, Vol. 108, Issue 22 https://doi.org/10.1103/PhysRevLett.108.226805	journal	June 2012
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Band gap tunning in BN-doped graphene systems with high carrier mobility Kaloni, T. P.; Joshi, R. P.; Adhikari, N. P. Applied Physics Letters, Vol. 104, Issue 7 https://doi.org/10.1063/1.4866383	journal	February 2014
In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes Liu, Zheng; Ma, Lulu; Shi, Gang Nature Nanotechnology, Vol. 8, Issue 2 https://doi.org/10.1038/nnano.2012.256	journal	January 2013
Atomic layers of hybridized boron nitride and graphene domains Ci, Lijie; Song, Li; Jin, Chuanhong Nature Materials, Vol. 9, Issue 5, p. 430-435 https://doi.org/10.1038/nmat2711	journal	February 2010
A relaxation correction to core-level binding-energy shifts in small molecules Davis, D. W.; Shirley, D. A. Chemical Physics Letters, Vol. 15, Issue 2 https://doi.org/10.1016/0009-2614(72)80145-3	journal	August 1972
On the validity of the equivalent cores approximation for computing X-ray photoemission and photoabsorption spectral bands Plashkevych, Oleksandr; Privalov, Timofei; Ågren, Hans Chemical Physics, Vol. 260, Issue 1-2 https://doi.org/10.1016/S0301-0104(00)00171-3	journal	October 2000
Theoretical Study of Core Excitations of Fullerene-Based Polymer Solar Cell Acceptors Song, Xiuneng; Hua, Weijie; Ma, Yong The Journal of Physical Chemistry C, Vol. 116, Issue 45 https://doi.org/10.1021/jp307834x	journal	November 2012
Core excitations of naphthalene: Vibrational structure versus chemical shifts Minkov, I.; Gel’mukhanov, F.; Friedlein, R. The Journal of Chemical Physics, Vol. 121, Issue 12 https://doi.org/10.1063/1.1784450	journal	September 2004
Electronic and Transport Properties of Boron-Doped Graphene Nanoribbons Martins, T. B.; Miwa, R. H.; da Silva, Antônio J. R. Physical Review Letters, Vol. 98, Issue 19 https://doi.org/10.1103/PhysRevLett.98.196803	journal	May 2007
Vibrationally resolved high-resolution NEXAFS and XPS spectra of phenanthrene and coronene Fronzoni, Giovanna; Baseggio, Oscar; Stener, Mauro The Journal of Chemical Physics, Vol. 141, Issue 4 https://doi.org/10.1063/1.4891221	journal	July 2014
Spectroscopic investigation of nitrogen doped graphene Podila, R.; Chacón-Torres, J.; Spear, J. T. Applied Physics Letters, Vol. 101, Issue 12 https://doi.org/10.1063/1.4752736	journal	September 2012
Electronic Structure of Nitrogen-Doped Graphene in the Ground and Core-Excited States from First-Principles Simulations Li, Xin; Hua, Weijie; Guo, Jinghua The Journal of Physical Chemistry C, Vol. 119, Issue 29 https://doi.org/10.1021/acs.jpcc.5b03981	journal	July 2015
Scanning Tunneling Microscopy Simulations of Nitrogen- and Boron-Doped Graphene and Single-Walled Carbon Nanotubes Zheng, Bing; Hermet, Patrick; Henrard, Luc ACS Nano, Vol. 4, Issue 7 https://doi.org/10.1021/nn1002425	journal	June 2010
Band Gaps of BN-Doped Graphene: Fluctuations, Trends, and Bounds Nascimento, Regiane; Martins, Jonathan da Rocha; Batista, Ronaldo J. C. The Journal of Physical Chemistry C, Vol. 119, Issue 9 https://doi.org/10.1021/jp5101347	journal	February 2015
Chirality and diameter dependent x-ray absorption of single walled carbon nanotubes Gao, Bin; Wu, ZiYu; Ågren, Hans The Journal of Chemical Physics, Vol. 131, Issue 3 https://doi.org/10.1063/1.3181809	journal	July 2009
Theoretical study of two Ih-symmetry-breaking C60 isomers and their chlorinated species in core-excited and ground states Qi, Jiayuan; Hua, Weijie; Gao, Bin Chemical Physics Letters, Vol. 539-540 https://doi.org/10.1016/j.cplett.2012.05.015	journal	June 2012
Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties Li, Qiucheng; Liu, Mengxi; Zhang, Yanfeng Small, Vol. 12, Issue 1 https://doi.org/10.1002/smll.201501766	journal	October 2015
N-Doping of Graphene Through Electrothermal Reactions with Ammonia Wang, Xinran; Li, Xiaolin; Zhang, Li Science, Vol. 324, Issue 5928, p. 768-771 https://doi.org/10.1126/science.1170335	journal	May 2009

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