Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1301989
- Alternate ID(s):
- OSTI ID: 1328481
- Report Number(s):
- SAND-2016-4695J; 640353; TRN: US1700087
- Journal Information:
- Journal of Applied Physics, Vol. 120, Issue 13; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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