Controlling the stoichiometry and doping of semiconductor materials
Patent
·
OSTI ID:1295614
Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 9,419,170
- Application Number:
- 14/615,068
- OSTI ID:
- 1295614
- Resource Relation:
- Patent File Date: 2015 Feb 05
- Country of Publication:
- United States
- Language:
- English
Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
|
journal | August 2013 |
Advances in control of doping and lifetime in single-crystal and polycrystalline CdTe
|
conference | June 2014 |
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