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Title: Resonant tunneling and intrinsic bistability in twisted graphene structures

Journal Article · · Physical Review B
 [1];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
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We predict that vertical transport in heterostructures formed by twisted graphene layers can reveal a unique bistability mechanism. Intrinsically bistable I - V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or nonresonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. Thus, the nanoscale architecture can enable uniquely fast switching times.

Research Organization:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0001088
OSTI ID:
1371391
Alternate ID(s):
OSTI ID: 1294727
Journal Information:
Physical Review B, Vol. 94, Issue 8; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

References (22)

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Quantum capacitance devices journal February 1988
Resonant tunnelling and negative differential conductance in graphene transistors journal April 2013
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Memory leads the way to better computing journal March 2015
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Memristive devices for computing journal January 2013
Coherent Tunneling and Negative Differential Conductivity in a Graphene/ h -BN/Graphene Heterostructure journal July 2014
Ambipolar bistable switching effect of graphene journal December 2010
Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene journal December 2008
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures journal September 2014

Figures / Tables (8)

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