Atomic Layer Etching at the Tipping Point: An Overview
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January 2015 |
Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
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January 2015 |
Chemical and physical sputtering of fluorinated silicon
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February 1995 |
The grand challenges of plasma etching: a manufacturing perspective
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June 2014 |
Atomic Layer Etching: An Industry Perspective
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January 2015 |
Application of cyclic fluorocarbon/argon discharges to device patterning
- Metzler, Dominik; Uppireddi, Kishore; Bruce, Robert L.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
https://doi.org/10.1116/1.4935460
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January 2016 |
Plasma-assisted etching: Ion-assisted surface chemistry
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May 1985 |
Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4 F 8 and Ar/CHF 3 plasma
- Metzler, Dominik; Li, Chen; Engelmann, Sebastian
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
https://doi.org/10.1116/1.4935462
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January 2016 |
Plasma–surface interactions in fluorocarbon etching of silicon dioxide
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May 1991 |
Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model
- Kuboi, Nobuyuki; Tatsumi, Tetsuya; Kinoshita, Takashi
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 6
https://doi.org/10.1116/1.4931782
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November 2015 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
- Schaepkens, M.; Standaert, T. E. F. M.; Rueger, N. R.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 1
https://doi.org/10.1116/1.582108
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January 1999 |
Free Radicals in an Inductively Coupled Etching Plasma
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April 1994 |
Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC
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September 2003 |
Chemical sputtering of fluorinated silicon
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January 1981 |
Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF 4 and CHF 3
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March 1994 |
Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF 4 and CHF 3
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March 1994 |
Reactive Ion Etching of Silicon and Silicon Dioxide in CF[sub 4] Plasmas Containing H[sub 2] or C[sub 2]F[sub 4] Additives
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January 1991 |
Molecular layer etching of GaAs
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February 1992 |
Precise Depth Control of Silicon Etching Using Chlorine Atomic Layer Etching
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January 2005 |
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
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June 2005 |
Atomic layer deposition (ALD): from precursors to thin film structures
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April 2002 |
Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
- Kawakami, Masatoshi; Metzler, Dominik; Li, Chen
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4
https://doi.org/10.1116/1.4949260
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May 2016 |
Fluorocarbon assisted atomic layer etching of SiO 2 using cyclic Ar/C 4 F 8 plasma
- Metzler, Dominik; Bruce, Robert L.; Engelmann, Sebastian
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2
https://doi.org/10.1116/1.4843575
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March 2014 |
Atomic Layer Deposition Chemistry Recent Developments and Future Challenges
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November 2003 |
Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor
- Rueger, N. R.; Beulens, J. J.; Schaepkens, M.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 4
https://doi.org/10.1116/1.580655
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July 1997 |
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
- Rueger, N. R.; Doemling, M. F.; Schaepkens, M.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 5
https://doi.org/10.1116/1.581987
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September 1999 |
Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverage
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September 1985 |
Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry
- Weilnboeck, F.; Bruce, R. L.; Engelmann, S.
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 5
https://doi.org/10.1116/1.3484249
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September 2010 |
High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer
- Standaert, T. E. F. M.; Schaepkens, M.; Rueger, N. R.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, Issue 1
https://doi.org/10.1116/1.580978
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January 1998 |
Role of C2F4, CF2, and ions in C4F8∕Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor
- Barela, Marcos J.; Anderson, Harold M.; Oehrlein, Gottlieb S.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, Issue 3
https://doi.org/10.1116/1.1874173
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May 2005 |
Layer-by-layer etching of Cl-adsorbed silicon surfaces by low energy Ar+ ion irradiation
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February 2002 |
Overview of atomic layer etching in the semiconductor industry
- Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2
https://doi.org/10.1116/1.4913379
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March 2015 |
Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching
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January 2015 |
Mechanistic studies of the initial stages of etching of Si and SiO2 in a CHF3 plasma
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September 1990 |
Atmospheric pressure plasma treatment of lipopolysaccharide in a controlled environment
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July 2013 |
Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching
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January 2015 |
Etching reactions for silicon with F atoms: Product distributions and ion enhancement mechanisms
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March 1991 |
Surface science aspects of etching reactions
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January 1992 |
Molecular dynamics simulations of Si etching by energetic CF3+
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December 1999 |
Plasma etching of Si and SiO 2 —The effect of oxygen additions to CF 4 plasmas
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July 1978 |
Structural and electrical characterization of HBr/O 2 plasma damage to Si substrate
- Fukasawa, Masanaga; Nakakubo, Yoshinori; Matsuda, Asahiko
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 4
https://doi.org/10.1116/1.3596606
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July 2011 |
Plasma-surface interactions of model polymers for advanced photoresists using C[sub 4]F[sub 8]∕Ar discharges and energetic ion beams
- Engelmann, S.; Bruce, R. L.; Kwon, T.
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, Issue 4
https://doi.org/10.1116/1.2759935
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January 2007 |
Quantification of surface film formation effects in fluorocarbon plasma etching of polysilicon
- Gray, David C.; Sawin, Herbert H.; Butterbaugh, Jeffrey W.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 3
https://doi.org/10.1116/1.577361
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May 1991 |
Role of oxygen impurities in etching of silicon by atomic hydrogen
- Veprek, Stan; Wang, Chunlin; Veprek-Heijman, Maritza G. J.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, Issue 3
https://doi.org/10.1116/1.2884731
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May 2008 |
Atomic Layer Deposition: An Overview
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January 2010 |
Selective etching of high-k HfO2 films over Si in hydrogen-added fluorocarbon (CF4∕Ar∕H2 and C4F8∕Ar∕H2) plasmas
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May 2006 |
Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar + ion irradiation
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November 1993 |
Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
- Standaert, T. E. F. M.; Hedlund, C.; Joseph, E. A.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 1
https://doi.org/10.1116/1.1626642
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January 2004 |
On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists
- Bruce, R. L.; Weilnboeck, F.; Lin, T.
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 4
https://doi.org/10.1116/1.3607604
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July 2011 |
Silicon etching mechanisms in a CF 4 /H 2 glow discharge
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July 1987 |
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
- Standaert, T. E. F. M.; Matsuo, P. J.; Allen, S. D.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 3
https://doi.org/10.1116/1.581643
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May 1999 |
Fluorination of the silicon dioxide surface during reactive ion and plasma etching in halocarbon plasmas
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March 1989 |
Plasma etching: Yesterday, today, and tomorrow
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September 2013 |
Mechanism of silicon etching in the presence of CF2, F, and Ar+
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September 2004 |
Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
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January 2004 |
Surface analysis of polymers by XPS and static SIMS
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January 1998 |