Method for forming monolayer graphene-boron nitride heterostructures
Patent
·
OSTI ID:1289690
A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-98CH10886
- Assignee:
- Brookhaven Science Associates, LLC (Upton, NY)
- Patent Number(s):
- 9,410,243
- Application Number:
- 14/453,314
- OSTI ID:
- 1289690
- Resource Relation:
- Patent File Date: 2014 Aug 06
- Country of Publication:
- United States
- Language:
- English
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