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Title: Method for forming monolayer graphene-boron nitride heterostructures

Patent ·
OSTI ID:1289690

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-98CH10886
Assignee:
Brookhaven Science Associates, LLC (Upton, NY)
Patent Number(s):
9,410,243
Application Number:
14/453,314
OSTI ID:
1289690
Resource Relation:
Patent File Date: 2014 Aug 06
Country of Publication:
United States
Language:
English

References (16)

Graphene and Hexagonal Boron Nitride Devices patent-application July 2011
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Chemical Vapor Deposition and Etching of High-Quality Monolayer Hexagonal Boron Nitride Films journal August 2011
Visualizing Individual Nitrogen Dopants in Monolayer Graphene journal August 2011
Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy journal March 2010
Epitaxial graphene on ruthenium journal April 2008
Real-Time Microscopy of Graphene Growth on Epitaxial Metal Films: Role of Template Thickness and Strain journal April 2012
Graphene growth on epitaxial Ru thin films on sapphire journal November 2010
Lateral Graphene–hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors journal February 2012
Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics journal January 2012
Graphene and boron nitride lateral heterostructures for atomically thin circuitry journal August 2012
Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers journal May 2011
Origin of half-semimetallicity induced at interfaces of C-BN heterostructures journal April 2010
Interface Formation in Monolayer Graphene-Boron Nitride Heterostructures journal January 2012
Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films journal December 2012
Microscopy of Graphene Growth, Processing, and Properties journal April 2013

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