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Title: Hydrogen centers and the conductivity of In2O3 single crystals

A series of infrared absorption experiments and complementary theory have been performed in order to determine the properties of OH and OD centers in In2O3 single crystals. Annealing In2O3 samples in H2 or D2 at temperatures near 450°C produces an n-type layer ≈0.06mm thick with an n-type doping of 1.6×1019 cm-3. The resulting free-carrier absorption is correlated with an OH center with a vibrational frequency of 3306 cm-1 that we associate with interstitial H+. Additional O-H (O-D) vibrational lines are assigned to metastable configurations of the interstitial H+(D+) center and complexes of H (D) with In vacancies. In addition, unlike other oxides studied recently where H trapped at an oxygen vacancy is the dominant shallow donor (ZnO and SnO2, for example), interstitial H+ is found to be the dominant H-related shallow donor in In2O3.
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4]
  1. Lehigh Univ., Bethlehem, PA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Univ. of Florida, Gainesville, FL (United States)
  4. Dresden Univ. of Technology (Germany)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 7; Journal ID: ISSN 2469-9950
American Physical Society (APS)
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
36 MATERIALS SCIENCE In2O3; single crystals; Hydrogen