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Title: Resonant state due to Bi in the dilute bismide alloy GaAs1-xBix

It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs1-xBix. We present ultrafast pump-probe reflectivity measurements of this interesting alloy system, which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ~ 860–900 nm have negative amplitude, which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi-resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ~200 ps at 10 K.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 1098-0121; PRBMDO
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 90; Journal Issue: 16
American Physical Society (APS)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
Country of Publication:
United States
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY dilute bismide alloy; pump-probe reflectivity measurements