Resonant state due to Bi in the dilute bismide alloy ${\mathrm{GaAs}}_{1-x}{\mathrm{Bi}}_x$

Journal Article · Wed Oct 01 00:00:00 EDT 2014 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.90.165203· OSTI ID:1275260

Joshya, R. S.; Ptak, A. J.; France, R.; Mascarenhas, A.; Kini, R. N.

It has been theoretically predicted that isolated Bi forms a resonant state in the valence band of the dilute bismide alloy, GaAs_1-xBi_x. We present ultrafast pump-probe reflectivity measurements of this interesting alloy system, which provide experimental evidence for the resonant state. The reflectivity transients for pump/probe wavelengths λ ~ 860–900 nm have negative amplitude, which we attribute to the absorption of the probe pulse by the pump induced carriers that are localized at the Bi-resonant state. Our measurements show that the lifetime of carriers localized at the resonant state is ~200 ps at 10 K.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences and Engineering Division
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1275260
• Report Number(s): NREL/JA-5J00-63311; PRBMDO
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 90, Issue 16; ISSN 1098-0121
• Publisher: American Physical Society (APS)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
dilute bismide alloy
pump-probe reflectivity measurements