In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

Crespillo, Miguel L.; Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

doi:10.1016/j.jlumin.2015.12.016

Title: In-situ luminescence monitoring of ion-induced damage evolution in SiO₂ and Al₂O₃

Journal Article · Thu Dec 17 00:00:00 EST 2015 · Journal of Luminescence

DOI:https://doi.org/10.1016/j.jlumin.2015.12.016· OSTI ID:1265945

Crespillo, Miguel L. ^[1]; Graham, Joseph T. ^[1]; Zhang, Yanwen ^[2]; Weber, William J. ^[2]

Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Real-time, in-situ ionoluminescence measurements provide information of evolution of emission bands with ion fluence, and thereby establish a correlation between point defect kinetics and phase stability. Using fast light ions (2 MeV H and 3.5 He MeV) and medium mass-high energy ions (8 MeV O, E=0.5 MeV/amu), scintillation materials of a-SiO₂, crystalline quartz, and Al₂O₃ are comparatively investigated at room temperature with the aim of obtaining a further insight on the structural defects induced by ion irradiation and understand the role of electronic energy loss on the damage processes. For more energetic heavy ions, the electronic energy deposition pattern offers higher rates of excitation deeper into the material and allows to evaluate the competing mechanisms between the radiative and non-radiative de-excitation processes. Irradiations with 8 MeV O ions have been selected corresponding to the electronic stopping regime, where the electronic stopping power is dominant, and above the critical amorphization threshold for quartz. Lastly, the usefulness of IBIL and its specific capabilities as a sensitive tool to investigate the material characterization and evaluation of radiation effects are demonstrated.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265945

Alternate ID(s):: OSTI ID: 1396535

Journal Information:: Journal of Luminescence, Vol. 172; ISSN 0022-2313

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 49 works

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36 MATERIALS SCIENCE
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alumina
quartz
ion beam induced luminescence
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irradiation effects

Title: In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O3

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