Crystal structure of laser-induced subsurface modifications in Si

Verburg, P. C.; Smillie, L. A.; Römer, G. R.  B.  E.; Haberl, B.; Bradby, J. E.; Williams, J. S.; Huis in ’t Veld, A. J.

doi:10.1007/s00339-015-9238-5

Title: Crystal structure of laser-induced subsurface modifications in Si

Journal Article · Thu Jun 04 00:00:00 EDT 2015 · Applied Physics. A, Materials Science and Processing

DOI:https://doi.org/10.1007/s00339-015-9238-5· OSTI ID:1265519

Verburg, P. C. ^[1]; Smillie, L. A. ^[2]; Römer, G. R. B. E. ^[1]; Haberl, B. ^[3]; Bradby, J. E. ^[2]; Williams, J. S. ^[2]; Huis in ’t Veld, A. J. ^[1]

Univ. of Twente, Enschede (Netherlands). Faculty of Engineering Technology. Chair of Applied Laser Technology
Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering
Australian National Univ., Canberra, ACT (Australia). Research School of Physics and Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Chemical and Engineering Materials Division

Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to mid-infrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this paper, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. Finally, in addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-iii/Si-xii occur as a result of the laser irradiation.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Contributing Organization:: Univ. of Twente, Enschede (Netherlands); Australian National Univ., Canberra, ACT (Australia)

OSTI ID:: 1265519

Journal Information:: Applied Physics. A, Materials Science and Processing, Vol. 120, Issue 2; ISSN 0947-8396

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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Inscribing diffraction gratings in bulk silicon with nanosecond laser pulses Chambonneau, M.; Richter, D.; Nolte, S. Optics Letters, Vol. 43, Issue 24 https://doi.org/10.1364/ol.43.006069	journal	January 2018
Positive- and negative-tone structuring of crystalline silicon by laser-assisted chemical etching Chambonneau, M.; Wang, X.; Yu, X. Optics Letters, Vol. 44, Issue 7 https://doi.org/10.1364/ol.44.001619	journal	January 2019

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