skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Characterization of electronic structure of periodically strained graphene

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4934701· OSTI ID:1263395
 [1];  [1];  [2];  [3];  [4];  [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States); Hewlett-Packard Lab., Palo Alto, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial strains in graphene in the range of 0.4% to 0.7%. Its band structure was characterized using photoemission from valance bands, shifts in the secondary electron emission, and x-ray absorption from the carbon 1s levels to the unoccupied graphene conduction bands. It was observed that relative to unstrained graphene, strained graphene had a higher work function and higher density of states in the valence and conduction bands. Furthermore, we measured the conductivity of the strained and unstrained graphene in response to a gate voltage and correlated the changes in their behavior to the changes in the electronic structure. From these sets of data, we propose a simple band diagram representing graphene with periodic biaxial strain.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1263395
Alternate ID(s):
OSTI ID: 1224928
Report Number(s):
SLAC-PUB-16639; APPLAB; arXiv:1511.01921
Journal Information:
Applied Physics Letters, Vol. 107, Issue 18; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

References (16)

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper journal October 2013
Effect of a High- κ Environment on Charge Carrier Mobility in Graphene journal May 2009
Substrate-induced bandgap opening in epitaxial graphene journal September 2007
Current saturation in zero-bandgap, top-gated graphene field-effect transistors journal September 2008
Graphene transistors journal May 2010
Direct observation of a widely tunable bandgap in bilayer graphene journal June 2009
A 90-nm Logic Technology Featuring Strained-Silicon journal November 2004
Band structure engineering of graphene by strain: First-principles calculations journal August 2008
Gap opening in graphene by shear strain journal June 2010
Gap opening in graphene by simple periodic inhomogeneous strain journal December 2011
Electronic−Mechanical Coupling in Graphene from in situ Nanoindentation Experiments and Multiscale Atomistic Simulations journal March 2011
Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening journal October 2008
Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopy journal April 2009
Ab initio determination of the phonon deformation potentials of graphene journal January 2002
Shear strain in carbon nanotubes under hydrostatic pressure journal May 2000
Effects of strain on electronic properties of graphene journal February 2010

Cited By (2)

Interfacial engineering in graphene bandgap journal January 2018
Resonant optical gating of suspended carbon nanotube transistor preprint January 2016

Similar Records

Characterization of electronic structure of periodically strained graphene
Journal Article · Mon Nov 02 00:00:00 EST 2015 · Applied Physics Letters · OSTI ID:1263395

Electronic properties of polycrystalline graphene under large local strain
Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:1263395

The Electronic Properties of Superatom States of Hollow Molecules
Journal Article · Tue May 17 00:00:00 EDT 2011 · Accounts of Chemical Research, 44(5):360-368 · OSTI ID:1263395