Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion
Patent
·
OSTI ID:1261619
A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- UChicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 9,388,499
- Application Number:
- 14/288,998
- OSTI ID:
- 1261619
- Resource Relation:
- Patent File Date: 2014 May 28
- Country of Publication:
- United States
- Language:
- English
Substrate Dependent Water Splitting with Ultrathin α-Fe 2 O 3 Electrodes
|
journal | May 2014 |
Atomic Layer Deposition of Fe2O3 Using Ferrocene and Ozone
|
journal | February 2011 |
Low-resistance ITO thin film and method for manufacturing such a film
|
patent | November 2004 |
Similar Records
Growth of indium-tin-oxide thin films by atomic layer epitaxy
Atomic Layer Deposition of Metastable β-Fe 2 O 3 via Isomorphic Epitaxy for Photoassisted Water Oxidation
Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors.
Journal Article
·
Sun Oct 01 00:00:00 EDT 1995
· Journal of the Electrochemical Society
·
OSTI ID:1261619
Atomic Layer Deposition of Metastable β-Fe 2 O 3 via Isomorphic Epitaxy for Photoassisted Water Oxidation
Journal Article
·
Tue Dec 09 00:00:00 EST 2014
· ACS Applied Materials and Interfaces
·
OSTI ID:1261619
+3 more
Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors.
Journal Article
·
Tue Jan 01 00:00:00 EST 2008
· J. Phys. Chem. C
·
OSTI ID:1261619
+2 more