Valley excitons in two-dimensional semiconductors

Yu, Hongyi; Cui, Xiaodong; Xu, Xiaodong; Yao, Wang

doi:10.1093/nsr/nwu078

Title: Valley excitons in two-dimensional semiconductors

Journal Article · Tue Dec 30 00:00:00 EST 2014 · National Science Review

DOI:https://doi.org/10.1093/nsr/nwu078· OSTI ID:1441158

Yu, Hongyi ^[1]; Cui, Xiaodong ^[2]; Xu, Xiaodong ^[3]; Yao, Wang ^[1]

Univ. of Hong Kong (China). Dept. of Physics and Center of Theoretical and Computational Physics
Univ. of Hong Kong (China). Dept. of Physics
Univ. of Washington, Seattle, WA (United States). Dept. of Physics and Dept. of Material Science and Engineering

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges, and the valley dependent optical selection rules for interband transitions. Here we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

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Research Organization:: Univ. of Washington, Seattle, WA (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0008145; AC05-00OR22725

OSTI ID:: 1441158

Alternate ID(s):: OSTI ID: 1261335

Journal Information:: National Science Review, Vol. 2, Issue 1; ISSN 2095-5138

Publisher:: China Science PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 233 works

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