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Title: Nuclear reaction analysis for H, Li, Be, B, C, N, O and F with an RBS check

Journal Article · · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
 [1];  [1];  [2];  [2];  [2];  [3];  [3];  [3];  [4];  [4];  [4];  [5];  [5];  [6];  [6];  [7];  [7];  [7]
  1. Univ. at Albany, SUNY, NY (United States). Physics Dept.
  2. Univ. of Missouri-Kansas City, MO (United States). Dept. of Physics and Astronomy
  3. Univ. of Helsinki (Finland). Dept. of Chemistry
  4. Univ. of Oslo (Norway). Dept. of Chemistry
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Solid State Division
  6. Univ. of Texas, Austin, TX (United States). Dept. of Electrical and Computer Engineering
  7. Intel Corporation, Hillsboro, OR (United States). Logic Technology Development

In this paper, 15N nuclear reaction analysis (NRA) for H is combined with 1.2 MeV deuteron (D) NRA which provides a simultaneous analysis for Li, Be, B, C, N, O and F. The energy dependence of the D NRA has been measured and used to correct for the D energy loss in film being analyzed. A 2 MeV He RBS measurement is made. Film composition is determined by a self-consistent analysis of the light element NRA data combined with an RBS analysis for heavy elements. This composition is used to simulate, with no adjustable parameters, the complete RBS spectrum. Finally, comparison of this simulated RBS spectrum with the measured spectrum provides a powerful check of the analysis.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1261264
Journal Information:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 371; ISSN 0168-583X
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 29 works
Citation information provided by
Web of Science

References (21)

Moore’s crystal ball: Device physics and technology past the 15nm generation journal July 2011
Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies journal October 2013
Low dielectric constant materials for microelectronics journal June 2003
Use of SiBN and SiBON Films Prepared by Plasma Enhanced Chemical Vapor Deposition from Borazine as Interconnection Dielectrics journal February 1997
Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition journal January 2002
Novel Carbon-Cage-Based Ultralow-$k$ Materials: Modeling and First Experiments journal November 2008
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal journal May 2004
Study of amorphous lithium silicate thin films grown by atomic layer deposition
  • Hämäläinen, Jani; Munnik, Frans; Hatanpää, Timo
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 1 https://doi.org/10.1116/1.3643349
journal January 2012
Atomic Layer Deposited Ultrathin HfO[sub 2] and Al[sub 2]O[sub 3] Films as Diffusion Barriers in Copper Interconnects journal January 2007
Comparison of the self-cleaning effects and electrical characteristics of BeO and Al 2 O 3 deposited as an interface passivation layer on GaAs MOS devices journal November 2011
Compositional effects on electrical and mechanical properties in carbon-doped oxide dielectric films: Application of Fourier-transform infrared spectroscopy
  • Andideh, Ebrahim; Lerner, Michael; Palmrose, Gerald
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 1 https://doi.org/10.1116/1.1640401
journal January 2004
Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition journal May 2007
Interface engineering for high interfacial strength between SiCOH and porous SiCOH interconnect dielectrics and diffusion caps journal March 2008
Mass and bond density measurements for PECVD a-SiCx:H thin films using Fourier transform-infrared spectroscopy journal November 2011
A method to extract absorption coefficient of thin films from transmission spectra of the films on thick substrates journal April 2012
Validation of a correction procedure for removing the optical effects from transmission spectra of thin films on substrates journal November 2012
Algorithms for the rapid simulation of Rutherford backscattering spectra journal June 1985
Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films journal July 2011
Influence of network bond percolation on the thermal, mechanical, electrical and optical properties of high and low-k a-SiC:H thin films journal November 2013
Influence of hydrogen content and network connectivity on the coefficient of thermal expansion and thermal stability for a-SiC:H thin films journal April 2014
Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications
  • Koh, Donghyi; Yum, Jung-Hwan; Banerjee, Sanjay K.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 32, Issue 3 https://doi.org/10.1116/1.4867436
journal May 2014

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