skip to main content

SciTech ConnectSciTech Connect

Title: Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids

The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. We conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
 [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [5]
  1. City Univ. of Hong Kong, Hong Kong (China)
  2. Queensland Univ. of Technology, Brisbane (Australia)
  3. The Hong Kong Polytechnic Univ., Hong Kong (China)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  5. City Univ. of Hong Kong, Hong Kong (China); City Univ. of Hong Kong, Shenzhen (China)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Nature Publishing Group
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
36 MATERIALS SCIENCE electronic devices; electronic properties and materials