Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; Pinchuk, Igor V.; Zhu, Tiancong; Beechem, Thomas; Kawakami, Roland K.

doi:10.1016/j.jcrysgro.2016.04.057

Title: Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

Journal Article · Wed Apr 27 00:00:00 EDT 2016 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2016.04.057· OSTI ID:1259540

Ahmed, Adam S. ^[1]; Wen, Hua ^[2]; Ohta, Taisuke ^[3]; Pinchuk, Igor V. ^[1]; Zhu, Tiancong ^[1]; Beechem, Thomas ^[3]; Kawakami, Roland K. ^[4]

The Ohio State Univ., Columbus, OH (United States)
Univ. of California, Riverside, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The Ohio State Univ., Columbus, OH (United States); Univ. of California, Riverside, CA (United States)

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1259540

Alternate ID(s):: OSTI ID: 1359323

Report Number(s):: SAND2015-10742J; PII: S0022024816302032

Journal Information:: Journal of Crystal Growth, Vol. 447, Issue C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 5 works

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