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This content will become publicly available on December 11, 2016

Title: Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. Lastly, this can be explained by amore » trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less
;  [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ;  [4] ;  [1] ;  [5] ;  [5] ;  [5] ;  [5] ;  [5]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Instituto de Microelectonica de Barcelona, IMB-CNM (CSIC), Bellaterra (Spain)
  3. Univ. of California, Santa Cruz, CA (United States)
  4. U.S. Naval Research Lab., Washington, D.C. (United States)
  5. Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0038-1101; KA2101020
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Solid-State Electronics
Additional Journal Information:
Journal Volume: 116; Journal Issue: C; Journal ID: ISSN 0038-1101
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
24 POWER TRANSMISSION AND DISTRIBUTION Al2O3; ALD; gamma irradiation; proton irradiation; irradiation effects; thermal stability