Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Bang, Junhyeok; Sun, Y. Y.; Song, Jung -Hoon; Zhang, S. B.

doi:10.1038/srep24404

Title: Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Journal Article · Thu Apr 14 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep24404· OSTI ID:1257833

Bang, Junhyeok ^[1]; Sun, Y. Y. ^[2]; Song, Jung -Hoon ^[3]; Zhang, S. B. ^[2]

Rensselaer Polytechnic Institute, Troy, NY (United States); Korea Basic Science Institute (KBSI), Daejeon (South Korea)
Rensselaer Polytechnic Institute, Troy, NY (United States)
Kongju National Univ., Kongju Chungnam (South Korea)

Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. As a result, this NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices.

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Research Organization:: Rensselaer Polytechnic Inst., Troy, NY (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0002623

OSTI ID:: 1257833

Journal Information:: Scientific Reports, Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 9 works

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