Pressure-induced phase transition in
- Univ. of California, San Diego, La Jolla, CA (United States)
Electrical resistivity measurements on La1–xSmxO0.5F0.5BiS2 (x = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition temperature Tc of each sample significantly increases at a Sm-concentration dependent pressure Pt, indicating a pressure-induced phase transition from a low-Tc to a high-Tc phase. At ambient pressure, Tc increases dramatically from 2.8 K at x = 0.1 to 5.4 K at x = 0.8; however, the Tc values at P > Pt decrease slightly with x and Pt shifts to higher pressures with Sm substitution. In the normal state, semiconducting-like behavior is suppressed and metallic conduction is induced with increasing pressure in all of the samples. Furthermore, these results suggest that the pressure dependence of Tc for the BiS2-based superconductors is related to the lattice parameters at ambient pressure and enable us to estimate the evolution of Tc for SmO0.5F0.5BiS2 under pressure.
- Research Organization:
- Univ. of California, San Diego, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0002909; NA0001841; FG02-04ER46105
- OSTI ID:
- 1257505
- Alternate ID(s):
- OSTI ID: 1215778
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 92, Issue 9; ISSN 1098-0121
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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