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Title: GaAs thin films and methods of making and using the same

Patent ·
OSTI ID:1257206
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Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

Research Organization:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
EE0005957
Assignee:
University of Oregon (Eugene, OR)
Patent Number(s):
9,368,670
Application Number:
14/692,421
OSTI ID:
1257206
Resource Relation:
Patent File Date: 2015 Apr 21
Country of Publication:
United States
Language:
English

References (13)

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Analysis of tandem III–V/SiGe devices grown on Si
  • Schmieder, Kenneth J.; Gerger, Andrew; Diaz, Martin
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conference June 2012
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Controlling crystallinity and thickness of monocrystalline layer by use of an elliptically polarized beam of light patent February 1984
Gallium arsenide phosphide top solar cell patent April 1986
Method of growing GaAs films on Si or GaAs substrates using ale patent October 1989
Hetero-epitaxial growth of non-lattice matched semiconductors patent October 1994
Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology patent March 1998

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