High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

Journal Article · Fri Jan 01 00:00:00 EST 2016 · Journal of Luminescence

DOI:https://doi.org/10.1016/j.jlumin.2016.01.028· OSTI ID:1256812

Kumar, E. Senthil ^[1]; Mohammadbeigi, F. ^[1]; Boatner, Lynn A. ^[2]; Watkins, S. P. ^[1]

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1. Simon Fraser Univ., Burnaby, BC (Canada)
2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. In this paper, we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I₁₀ bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I₁₀ line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I₁₀ transition are unambiguously identified and yield a donor binding energy of 71 meV. Finally, in contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn_Zn double donor compensated by an unknown single acceptor.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES); Natural Sciences and Engineering Research Council of Canada (NSERC)
• Grant/Contract Number: AC05-00OR22725
• OSTI ID: 1256812
• Alternate ID(s): OSTI ID: 1261287; OSTI ID: 1339003
• Journal Information: Journal of Luminescence, Vol. 176; ISSN 0022-2313
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
zinc oxide
photoluminescence
electrical transport
dopants
Sn