Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Aytac, Y.; Olson, B. V.; Kim, J. K.; Shaner, E. A.; Hawkins, S. D.; Klem, J. F.; Olesberg, J.; Flatté, M. E.; Boggess, T. F.

doi:10.1063/1.4953386

Title: Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Journal Article · Tue Jun 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4953386· OSTI ID:1256122

Aytac, Y. ^[1];

^[2]; Kim, J. K. ^[2]; Shaner, E. A. ^[2]; Hawkins, S. D. ^[2]; Klem, J. F. ^[2]; Olesberg, J. ^[3]; Flatté, M. E. ^[1];

^[1]

Department of Physics and Astronomy and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA
Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Department of Chemistry and Optical Science and Technology Center, University of Iowa, Iowa City, Iowa 52242, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1256122

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 119 Journal Issue: 21; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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References (16)

Auger optimization in mid-infrared lasers: the importance of final-state optimization Flatte, Michael; Grein, C. Optics Express, Vol. 2, Issue 4 https://doi.org/10.1364/OE.2.000131	journal	January 1998
Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 103, Issue 5 https://doi.org/10.1063/1.4817400	journal	July 2013
Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Journal of Applied Physics, Vol. 118, Issue 12 https://doi.org/10.1063/1.4931419	journal	September 2015
Energy gap versus alloy composition and temperature in Hg _{1− x} Cd _x Te Hansen, G. L.; Schmit, J. L.; Casselman, T. N. Journal of Applied Physics, Vol. 53, Issue 10 https://doi.org/10.1063/1.330018	journal	October 1982
“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance? Tennant, W. E. Journal of Electronic Materials, Vol. 39, Issue 7 https://doi.org/10.1007/s11664-010-1084-9	journal	February 2010
Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices Huang, Edward Kwei-wei; Hoang, Minh-Anh; Chen, Guanxi Optics Letters, Vol. 37, Issue 22 https://doi.org/10.1364/OL.37.004744	journal	January 2012
Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices Olson, B. V.; Grein, C. H.; Kim, J. K. Applied Physics Letters, Vol. 107, Issue 26 https://doi.org/10.1063/1.4939147	journal	December 2015
Intensity- and Temperature-Dependent Carrier Recombination in $InAs / In {As}_{1 - x} {S b}_{x}$ Type-II Superlattices Olson, B. V.; Kadlec, E. A.; Kim, J. K. Physical Review Applied, Vol. 3, Issue 4 https://doi.org/10.1103/PhysRevApplied.3.044010	journal	April 2015
Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice Jang, D. -J.; Flatté, Michael E.; Grein, C. H. Physical Review B, Vol. 58, Issue 19 https://doi.org/10.1103/PhysRevB.58.13047	journal	November 1998
InAs/GaInSb superlattices as a promising material system for third generation infrared detectors Rogalski, A.; Martyniuk, P. Infrared Physics & Technology, Vol. 48, Issue 1 https://doi.org/10.1016/j.infrared.2005.01.003	journal	April 2006
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes Grein, C. H.; Young, P. M.; Flatté, M. E. Journal of Applied Physics, Vol. 78, Issue 12 https://doi.org/10.1063/1.360422	journal	December 1995
Post growth annealing study on long wavelength infrared InAs/GaSb superlattices Haugan, H. J.; Brown, G. J.; Elhamri, S. Journal of Applied Physics, Vol. 111, Issue 5 https://doi.org/10.1063/1.3693535	journal	March 2012
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice Olson, B. V.; Shaner, E. A.; Kim, J. K. Applied Physics Letters, Vol. 101, Issue 9 https://doi.org/10.1063/1.4749842	journal	August 2012
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM Wood, M. R.; Kanedy, K.; Lopez, F. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.02.063	journal	September 2015
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony Grein, C. H.; Flatté, M. E.; Olesberg, J. T. Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1521255	journal	December 2002
Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in $InAs / In (As, Sb)$ Type-II Superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Physical Review Applied, Vol. 5, Issue 5 https://doi.org/10.1103/PhysRevApplied.5.054016	journal	May 2016

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