Graphene materials having randomly distributed two-dimensional structural defects
Patent
·
OSTI ID:1255214
Graphene-based storage materials for high-power battery applications are provided. The storage materials are composed of vertical stacks of graphene sheets and have reduced resistance for Li ion transport. This reduced resistance is achieved by incorporating a random distribution of structural defects into the stacked graphene sheets, whereby the structural defects facilitate the diffusion of Li ions into the interior of the storage materials.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- NORTHWESTERN UNIVERSITY (Evanston, IL)
- Patent Number(s):
- 9,352,968
- Application Number:
- 14/025,572
- OSTI ID:
- 1255214
- Resource Relation:
- Patent File Date: 2013 Sep 12
- Country of Publication:
- United States
- Language:
- English
Similar Records
Graphene materials having randomly distributed two-dimensional structural defects
First-Principles Analysis of Defect-Mediated Li Adsorption on Graphene
First-Principles Analysis of Defect-Mediated Li Adsorption on Graphene
Patent
·
Tue Oct 08 00:00:00 EDT 2013
·
OSTI ID:1255214
+1 more
First-Principles Analysis of Defect-Mediated Li Adsorption on Graphene
Journal Article
·
Wed Dec 10 00:00:00 EST 2014
· ACS Applied Materials and Interfaces
·
OSTI ID:1255214
+2 more
First-Principles Analysis of Defect-Mediated Li Adsorption on Graphene
Journal Article
·
Mon Nov 24 00:00:00 EST 2014
· ACS Applied Materials and Interfaces
·
OSTI ID:1255214
+2 more