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Title: Simulations of singlet exciton diffusion in organic semiconductors: a review

Journal Article · · RSC Advances
DOI:https://doi.org/10.1039/C4RA12409J· OSTI ID:1254833
 [1];  [2]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. TUBITAK Gebze Yerleskesi Marmara Research Center (Turkey)

Our review describes the various aspects of simulation strategies for exciton diffusion in condensed phase thin films of organic semiconductors. Several methods for calculating energy transfer rate constants are discussed along with procedures for how to account for energetic disorder. Exciton diffusion can be modelled by using kinetic Monte-Carlo methods or master equations. Recent literature on simulation efforts for estimating exciton diffusion lengths of various conjugated polymers and small molecules are introduced. Moreover, these studies are discussed in the context of the effects of morphology on exciton diffusion and the necessity of accurate treatment of disorder for comparison of simulation results with those of experiment.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC52-06NA25396
OSTI ID:
1254833
Report Number(s):
LA-UR-14-27941; RSCACL
Journal Information:
RSC Advances, Vol. 5, Issue 11; ISSN 2046-2069
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 43 works
Citation information provided by
Web of Science

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Investigation of Excitonic Gates in Organic Semiconductor Thin Films journal January 2019
Synthesis, Characterization, and Crystal Structures of Imides Condensed with p-Phenylamino(Phenyl) Amine and Fluorescence Property journal June 2019