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Title: Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4950959· OSTI ID:1275785
 [1];  [1];  [2];  [3];  [2];  [4];  [3]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
  2. Univ. of Wisconsin, Madison, WI (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. Northwestern Univ., Evanston, IL (United States)

Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuum conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); US Department of the Navy, Office of Naval Research (ONR); National Science Foundation (NSF)
Grant/Contract Number:
AC02-06CH11357; FG02-09ER16109; SC0006414
OSTI ID:
1275785
Alternate ID(s):
OSTI ID: 1254194
Journal Information:
Applied Physics Letters, Vol. 108, Issue 21; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 28 works
Citation information provided by
Web of Science

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Cited By (5)

Graphene on Group‐IV Elementary Semiconductors: The Direct Growth Approach and Its Applications journal February 2019
Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates journal September 2018
Direct Growth of Unidirectional Graphene Nanoribbons on Vicinal Ge(001) journal September 2019
Alignment of semiconducting graphene nanoribbons on vicinal Ge(001) journal January 2019
Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing journal November 2018

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