Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like

Patent · Tue May 10 00:00:00 EDT 2016

OSTI ID:1252444

Stowe, Ashley; Burger, Arnold

A method for synthesizing I-III-VI.sub.2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.

• Research Organization: Oak Ridge Y-12 Plant (Y-12), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22800
• Assignee: Consolidated Nuclear Security, LLC (Reston, VA) Fisk University (Nashville, TN)
• Patent Number(s): 9,334,581
• Application Number: 13/658,591
• OSTI ID: 1252444
• Resource Relation: Patent File Date: 2012 Oct 23
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE