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Title: Effect of nitrogen on the growth of boron doped single crystal diamond

Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A modification in surface morphology of the film with increasing boron concentration in the plasma has been observed using atomic force microscopy. Use of nitrogen during boron doping has been found to improve the surface morphology and the growth rate of films but it lowers the electrical conductivity of the film. The Raman spectra indicated a zone center optical phonon mode along with a few additional bands at the lower wavenumber regions. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. Furthermore, sharpening and upshift of Raman line was observed in the film that was grown in presence of nitrogen along with diborane in process gas.
 [1] ;  [1]
  1. Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Journal of Materials Science Research
Additional Journal Information:
Journal Volume: 3; Journal Issue: 1; Journal ID: ISSN 1927-0585
Canadian Center of Science and Education
Research Org:
Univ. of Alabama at Birmingham, Birmingham, AL (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE epitaxial; semiconductor; diamond; spectroscopy; thin-film