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Title: Radiation Effects on Luminescent Coupling in III-V Solar Cells

Advances in the architecture of GaInP solar cells have recently lead to ~21% conversion efficiencies under the global spectrum due to high radiative efficiencies, and the resulting strong luminescent coupling in GaInP/GaAs tandems has lead to record dual-junction efficiencies. The suitability of these newer GaInP cells to space applications has not been examined, however. Here we present a study to compare the radiation hardness of rear-heterojunction and more traditional GaInP junctions and the resulting luminescent coupling. Pairs of GaInP/GaAs tandem cells were irradiated with 1 MeV electrons at fluences up to 1015 e/cm2. The cells were thoroughly characterized, before and after irradiation, by measuring the quantum efficiency, IV characteristics, electroluminescence and luminescent coupling. We find the luminescent coupling to be unchanged below ~1013 e/cm2, and to decrease to zero by 1015 e/cm2. For all fluence levels, the rear heterojunction structure had a higher coupling constant than the front junction structure. Despite these advantages, the efficiency degraded at the same rate for both structures.
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Resource Relation:
Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE GaInP; GaAs; radiation hardness; quantum efficiency; IV characteristics; luminescent coupling