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Title: Quantitative Determination of Grain Boundary Recombination Velocity in CdTe by Combination of Cathodoluminescence Measurements and Numerical Simulations

We developed a 2D numerical model simulating cathodoluminescence (CL) measurements in CdTe. Using this model we analyze how various material parameters impact the CL contrast and intensity observed in the measured signal, and determine if and when we can accurately determine the value of grain boundary recombination rate. In addition to grain boundary (GB) recombination, the grain size and its ratio to the carrier diffusion length impact the results of the measurement. Holding the grain interior and GB recombination rates constant, we find that as the grain size increases and becomes larger than the diffusion length, the observed CL contrast is larger. In a small grain size material the surface recombination lowers the overall intensity of the signal, but does not impact the observed contrast significantly. In a large grain size material, high surface recombination velocity can lower the observed contrast in a measurement. This model in combination with an experiment is used to quantify the grain boundary recombination velocity in polycrystalline CdTe before and after the CdCl2 treatment.
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Conference: Presented at the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana; Related Information: Proceedings of the 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, Louisiana
Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
14 SOLAR ENERGY; 36 MATERIALS SCIENCE CdTe; grain boundaries; cathodoluminescence; numerical simulations