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Title: Excitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuits

Journal Article · · ACS Photonics
 [1];  [2]; ;  [3];  [2];  [3]; ; ;  [4];  [2];  [1];  [3]; ;  [2];  [1];  [1]
  1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
  2. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
  3. Department of Electrical &, Computer Engineering, Baylor University, Waco, Texas 76798, United States
  4. Department of Physics and Engineering Physics, Morgan State University, Baltimore, Maryland 21251, United States
+ Show Author Affiliations

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. A major challenge to this integration is the identification of suitable materials that can emit and absorb light at the same wavelength. In this paper we utilize unique excitonic transitions in WS2 monolayers and show that WS2 exhibits a perfect overlap between its absorption and photoluminescence spectra. By coupling WS2 to Ag nanowires, we then show that WS2 monolayers are able to excite and absorb surface plasmons of Ag nanowires at the same wavelength of exciton photoluminescence. This resonant absorption by WS2 is distinguished from that of the ohmic propagation loss of silver nanowires, resulting in a short propagation length of surface plasmons. Our demonstration of resonant optical generation and detection of surface plasmons enables nanoscale optical communication and paves the way for on-chip electronic–photonic integrated circuits.

Research Organization:
Univ. of Houston, TX (United States); Rice Univ., Houston, TX (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Robert A. Welch Foundation (United States); Defense Threat Reduction Agency (DTRA) (United States)
Grant/Contract Number:
SC0010831; ECCS-1240510; ECCS-1327093; E-1728; C-1716; FA 7000-13-1-0001
OSTI ID:
1249954
Alternate ID(s):
OSTI ID: 1437115
Journal Information:
ACS Photonics, Journal Name: ACS Photonics Vol. 3 Journal Issue: 5; ISSN 2330-4022
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 21 works
Citation information provided by
Web of Science

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42 ENGINEERING
2D transition metal dichalcogenides
chip-scale optical communication
electronic-photonic integrated circuits
resonant exciton-plasmon interaction