Tunable inverse topological heterostructure utilizing (Bi1-xInx)2Se3 and multichannel weak-antilocalization effect

Brahlek, Matthew J.; Koirala, Nikesh; Liu, Jianpeng; Yusufaly, Tahir I.; Salehi, Maryam; Han, Myung-Geun; Zhu, Yimei; Vanderbilt, David; Oh, Seongshik

doi:10.1103/PhysRevB.93.125416

Title: Tunable inverse topological heterostructure utilizing ${(B i_{1 - x} I n_{x})}_{2} S e_{3}$ and multichannel weak-antilocalization effect

Journal Article · Thu Mar 10 00:00:00 EST 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.93.125416· OSTI ID:1248807

Brahlek, Matthew J. ^[1]; Koirala, Nikesh ^[1]; Liu, Jianpeng ^[1]; Yusufaly, Tahir I. ^[1]; Salehi, Maryam ^[1]; Han, Myung-Geun ^[2]; Zhu, Yimei ^[2]; Vanderbilt, David ^[1]; Oh, Seongshik ^[1]

State Univ. of New Jersey, Piscataway, NJ (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi_1-xIn_x)₂Se₃ in between two layers of the TI Bi₂Se₃ using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary the thickness and the composition of the (Bi_1-xIn_x)₂Se₃ layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704; AC02-98CH10886

OSTI ID:: 1248807

Alternate ID(s):: OSTI ID: 1242588

Report Number(s):: BNL-112062-2016-JA; PRBMDO; R&D Project: MA015MACA; KC0201010

Journal Information:: Physical Review B, Vol. 93, Issue 12; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 20 works

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References (30)

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