Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer

Wierer, Jonathan J.; Allerman, Andrew A.; Skogen, Erik J.; Tauke-Pedretti, Anna; Vawter, Gregory A.; Montaño, Ines

doi:10.7567/APEX.8.061004

Title: Selective layer disordering in intersubband Al_0.028Ga_0.972 N/AlN superlattices with silicon nitride capping layer

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Abstract

We demonstrate the selective layer disordering in intersubband Al_0.028Ga_0.972 N/AlN superlattices using a silicon nitride (SiN_x) capping layer. The (SiN_x) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiN_x thickness. The layer disordering is caused by Si diffusion, and the SiN_x layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiN_x layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.

Authors:

Wierer, Jonathan J. ^[1]; Allerman, Andrew A. ^[1]; Skogen, Erik J. ^[1]; Tauke-Pedretti, Anna ^[1]; Vawter, Gregory A. ^[1]; Montaño, Ines ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Jun 01 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1248572

Report Number(s):: SAND-2016-0433J
Journal ID: ISSN 1882-0778; 618634

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Applied Physics Express

Additional Journal Information:: Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats


                    Wierer, Jonathan J., Allerman, Andrew A., Skogen, Erik J., Tauke-Pedretti, Anna, Vawter, Gregory A., and Montaño, Ines. Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer.  United States: N. p., 2015. 
        Web.  doi:10.7567/APEX.8.061004.

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                    Wierer, Jonathan J., Allerman, Andrew A., Skogen, Erik J., Tauke-Pedretti, Anna, Vawter, Gregory A., & Montaño, Ines. Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer.  United States.  https://doi.org/10.7567/APEX.8.061004

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                    Wierer, Jonathan J., Allerman, Andrew A., Skogen, Erik J., Tauke-Pedretti, Anna, Vawter, Gregory A., and Montaño, Ines. 2015.  
        "Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer".  United States.  https://doi.org/10.7567/APEX.8.061004.  https://www.osti.gov/servlets/purl/1248572.

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@article{osti_1248572,

  title        = {Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer},

  author       = {Wierer, Jonathan J. and Allerman, Andrew A. and Skogen, Erik J. and Tauke-Pedretti, Anna and Vawter, Gregory A. and Montaño, Ines},

  abstractNote = {We demonstrate the selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices using a silicon nitride (SiNx) capping layer. The (SiNx) capped superlattice exhibits suppressed layer disordering under high-temperature annealing. In addition, the rate of layer disordering is reduced with increased SiNx thickness. The layer disordering is caused by Si diffusion, and the SiNx layer inhibits vacancy formation at the crystal surface and ultimately, the movement of Al and Ga atoms across the heterointerfaces. In conclusion, patterning of the SiNx layer results in selective layer disordering, an attractive method to integrate active and passive III–nitride-based intersubband devices.},

  doi          = {10.7567/APEX.8.061004},

  url          = {https://www.osti.gov/biblio/1248572},
  journal      = {Applied Physics Express},

  issn         = {1882-0778},

  number       = 6,

  volume       = 8,

  place        = {United States},

  year         = {Mon Jun 01 00:00:00 EDT 2015},

  month        = {Mon Jun 01 00:00:00 EDT 2015}

}

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Title: Selective layer disordering in intersubband Al0.028Ga0.972 N/AlN superlattices with silicon nitride capping layer

Abstract

Citation Formats

Title: Selective layer disordering in intersubband Al_0.028Ga_0.972 N/AlN superlattices with silicon nitride capping layer