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This content will become publicly available on May 2, 2017

Title: A low-temperature study of manganese-induced ferromagnetism and valence band convergence in tin telluride

Here, SnTe is renowned for its promise in advancing energy-related technologies based on thermoelectricity and for its topological crystalline insulator character. Here, we demonstrate that each Mn atom introduces ~ 4 μB (Bohr magneton) of magnetic moment to Sn1-xMnxTe. The Curie temperature TC reaches ~ 14 K for x = 0.12, as observed in the field dependent hysteresis of magnetization and the anomalous Hall effect. In accordance with a modified two-band electronic Kane model, the light L-valence-band and the heavy Σ-valence-band gradually converge in energy with increasing Mn concentration, leading to a decreasing ordinary Hall coefficient RH and a favorably enhanced Seebeck coefficient S at the same time. With the thermal conductivity κ lowered chiefly via point defects associated with the incorporation of Mn, the strategy of Mn doping also bodes well for efficient thermoelectric applications at elevated temperatures.
 [1] ;  [2] ;  [2] ;  [3] ;  [4]
  1. Univ. of Michigan, Ann Arbor, MI (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Northwestern Univ., Evanston, IL (United States)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
OSTI Identifier:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 18; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Univ. of Michigan, Ann Arbor, MI (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
25 ENERGY STORAGE SnTe; thermoelectric; ferromagnetism; band convergence; II-VI semiconductors; doping; ferromagnetism; phonons; band structure