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Title: Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

Journal Article · · Crystal Research and Technology
 [1];  [2];  [2];  [2];  [2];  [3];  [2];  [2];  [2];  [4];  [5];  [6];  [6];  [7];  [8];  [9];  [9];  [10]
  1. Shubnikov Institute for Crystallography RAS, Moscow (Russia); Lomonosov Moscow State Univ., Moscow (Russia)
  2. Shubnikov Institute for Crystallography RAS, Moscow (Russia)
  3. Institute for Crystallography RAS, Kaluga (Russia)
  4. Julich Center for Neutron Science (JCNS) and Peter Grunberg Institute PGI, Julich (Germany); Univ. of Liege, Liege (Belgium); European Synchrotron Radiation Facility, Grenoble (France)
  5. Julich Center for Neutron Science (JCNS) and Peter Grunberg Institute PGI, Julich (Germany); Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  6. Karlsruhe Institute of Technology, Institute for Photon Science and Synchrotron Radiation and ANKA Synchrotron Radiation Facility, Eggenstein-Leopoldshafen (Germany)
  7. European Synchrotron Radiation Facility, Grenoble (France)
  8. Univ. of Freiburg, Freiburg (Germany)
  9. Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)
  10. Julich Center for Neutron Science (JCNS) and Peter Grunberg Institute PGI, Julich (Germany); Univ. of Liege, Liege (Belgium); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
+ Show Author Affiliations

We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 102-103 cm-2 and a small area with approximately 2*2 mm2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growth rate and dislocation density is observed, though growth rate is not the only parameter impacting the quality.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1247945
Journal Information:
Crystal Research and Technology, Vol. 51, Issue 4; ISSN 0232-1300
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (23)

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journal June 2009
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Cited By (3)

New materials for high-energy-resolution x-ray optics journal June 2017
Rocking curve imaging of high quality sapphire crystals in backscattering geometry text January 2017
Rocking curve imaging of high quality sapphire crystals in backscattering geometry journal January 2017

Figures / Tables (12)

Figure 1:(p. 3)figure Figure 1:
Figure 2:(p. 3)figure Figure 2:
Figure 3(p. 3)figure Figure 3
0 denotes the intensity level of incident beam. Measurement regime: 16 kV, 15 mA, detector speed limit is 104 counts/s, horizontal slit H = 1 mm, vertical slit V = 1 mm. Experimental results of wafer #1 with the double-­slit setup, for individually open slits (b) S1, (c) S2 and (d) simultaneous S1 + S2 (see Fig. 1). The FWHMs of all three peaks are equal to Δθ1/2 = 2.5" whereas the intensity of the S1 + S2 peak is the sum of S1 and S2 intensities, thus indicating the absence of sample bending (R > 500 m)." data-ostiid="1247945">
Figure 4:(p. 4)figure Figure 4:
g00012 at the topograph surface is shown." data-ostiid="1247945">
Figure 5:(p. 4)figure Figure 5:
Table 1(p. 4)table Table 1
(b) S1, (c) S2 and (d) simultaneous S1 + S2. The FWHM for the case of both slits open is increased from 4" to 6", thus bearing the evidence of a slight sample bending." data-ostiid="1247945">
Figure 6:(p. 5)figure Figure 6:
g13-­44 at the surface of topograph is shown." data-ostiid="1247945">
Figure 7:(p. 5)figure Figure 7:
Figure 8(p. 6)figure Figure 8
Figure 10(p. 7)figure Figure 10
Figure 9(p. 7)figure Figure 9
Figure 11:(p. 8)figure Figure 11:

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Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
x-ray optics
topography
sapphire
dislocations