Pressure-Resistant Intermediate Valence in the Kondo Insulator
Journal Article
·
· Physical Review Letters
- Univ. of Maryland, College Park, MD (United States); National Institute of Standards and Technology, Gaithersburg, MD (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Univ. of Maryland, College Park, MD (United States)
- Carnegie Inst. of Washington, Argonne, IL (United States)
- Columbia Univ., New York, NY (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Resonant x-ray emission spectroscopy was used to determine the pressure dependence of the f-electron occupancy in the Kondo insulator SmB6. Applied pressure reduces the f occupancy, but surprisingly, the material maintains a significant divalent character up to a pressure of at least 35 GPa. Thus, the closure of the resistive activation energy gap and onset of magnetic order are not driven by stabilization of an integer valent state. In conclusion, over the entire pressure range, the material maintains a remarkably stable intermediate valence that can in principle support a nontrivial band structure.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-05CH11231; NA0001974; FG02-99ER45775; AC02-06CH11357; AC52-07NA27344
- OSTI ID:
- 1379284
- Alternate ID(s):
- OSTI ID: 1247246
- Journal Information:
- Physical Review Letters, Vol. 116, Issue 15; ISSN 0031-9007
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 24 works
Citation information provided by
Web of Science
Web of Science
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Valence transition in topological Kondo insulator
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journal | October 2019 |
Pressure-driven valence increase and metallization in the Kondo insulator
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journal | December 2019 |
$4f$ Crystal Field Ground State of the Strongly Correlated Topological Insulator $SmB_{6}$
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text | January 2018 |
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