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Title: Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO2/AlGaN Gate Stacks.

Conference ·
OSTI ID:1246875

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1246875
Report Number(s):
SAND2015-2488C; 579784
Resource Relation:
Conference: Proposed for presentation at the MRS Spring 2015.
Country of Publication:
United States
Language:
English