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Title: Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion

Patent ·
OSTI ID:1246836

A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO.sub.2 composition.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
9,312,342
Application Number:
13/994,663
OSTI ID:
1246836
Resource Relation:
Patent File Date: 2011 Dec 16
Country of Publication:
United States
Language:
English

References (12)

Metal electrons and catalysis journal January 1946
Strong Interactions in Supported-Metal Catalysts journal March 1981
Strong metal-support interactions journal November 1987
Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion journal February 2011
Highly n-Type Titanium Oxide as an Electronically Active Support for Platinum in the Catalytic Oxidation of Carbon Monoxide journal July 2011
Strong metal-support interactions. Group 8 noble metals supported on titanium dioxide journal January 1978
The Catalytic Nanodiode: Detecting Continous Electron Flow at Oxide-Metal Interfaces Generated by a Gas-Phase Exothermic Reaction journal May 2006
Photoresponsive amorphous semiconductor materials, methods of making the same, and photoanodes made therewith patent April 1985
Light transmissive electrically conductive oxide electrode formed in the presence of a stabilizing gas patent August 1992
Methods for controlling dopant concentration and activation in semiconductor structures patent December 2010
Penetrating implant for forming a semiconductor device patent May 2011
Fluorine plasma treatment of high-k gate stack for defect passivation patent-application March 2008

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