Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion
Patent
·
OSTI ID:1246836
A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO.sub.2 composition.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 9,312,342
- Application Number:
- 13/994,663
- OSTI ID:
- 1246836
- Resource Relation:
- Patent File Date: 2011 Dec 16
- Country of Publication:
- United States
- Language:
- English
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