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Title: Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

Journal Article · · Nano Letters

We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC00112704
OSTI ID:
1246803
Report Number(s):
BNL-111981-2016-JA; R&D Project: 16060; KC0403020
Journal Information:
Nano Letters, Vol. 16, Issue 4; ISSN 1530-6984
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

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Cited By (7)

Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate journal January 2018
Crystal phase evolution in kinked GaN nanowires journal January 2020
In Situ Environmental TEM in Imaging Gas and Liquid Phase Chemical Reactions for Materials Research journal September 2016
In Situ Transmission Electron Microscopy book January 2019
In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth journal October 2019
In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth text January 2019
Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon journal December 2017

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