Effects of incident UV light on the surface morphology of MBE grown GaAs

Beaton, Daniel A.; Sanders, C.; Alberi, K.

doi:10.1016/j.jcrysgro.2014.12.015

Title: Effects of incident UV light on the surface morphology of MBE grown GaAs

Journal Article · Sun Mar 01 00:00:00 EST 2015 · Journal of Crystal Growth

DOI:https://doi.org/10.1016/j.jcrysgro.2014.12.015· OSTI ID:1246422

Beaton, Daniel A.; Sanders, C.; Alberi, K.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC36-OSGO-28308

OSTI ID:: 1246422

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 413 Journal Issue: C; ISSN 0022-0248

Publisher:: ElsevierCopyright Statement

Country of Publication:: Netherlands

Language:: English

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Cited by: 7 works

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References (18)

Ion–surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma‐enhanced CVD: Applications to semiconductors Greene, J. E.; Barnett, S. A. Journal of Vacuum Science and Technology, Vol. 21, Issue 2 https://doi.org/10.1116/1.571767	journal	July 1982
Activated Si-H Exchange at Si-Island Edges on Si(001) Šmilauer, Pavel; Mizushima, Kazuki; Vvedensky, Dimitri D. Physical Review Letters, Vol. 81, Issue 25 https://doi.org/10.1103/PhysRevLett.81.5600	journal	December 1998
Controlled substitutional doping of CdTe thin films grown by photoassisted molecular‐beam epitaxy Bicknell, R. N.; Giles, N. C.; Schetzina, J. F. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 5, Issue 5 https://doi.org/10.1116/1.574216	journal	September 1987
Growth modes in atomic hydrogen‐assisted molecular beam epitaxy of GaAs Okada, Yoshitaka; Fujita, Tomoya; Kawabe, Mitsuo Applied Physics Letters, Vol. 67, Issue 5 https://doi.org/10.1063/1.115200	journal	July 1995
Low energy ion assist during deposition — an effective tool for controlling thin film microstructure Ensinger, W. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 127-128 https://doi.org/10.1016/S0168-583X(97)00010-4	journal	May 1997
Light-enhanced molecular-beam epitaxial growth in II–VI and III–V compound semiconductors Farrell, H. H. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 2 https://doi.org/10.1116/1.584374	journal	March 1988
The stabilization of metastable phases by epitaxy Farrow, R. F. C. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 1, Issue 2 https://doi.org/10.1116/1.582491	journal	January 1983
Growth and phase stability of epitaxial metastable InSb _{1− x} Bi _x films on GaAs. I. Crystal growth Zilko, J. L.; Greene, J. E. Journal of Applied Physics, Vol. 51, Issue 3 https://doi.org/10.1063/1.327807	journal	March 1980
Laser irradiation during MBE growth of ZnSxSe1−x: A new growth parameter Matsumura, Nobuo; Fukada, Takashi; Saraie, Junji Journal of Crystal Growth, Vol. 101, Issue 1-4 https://doi.org/10.1016/0022-0248(90)90937-G	journal	April 1990
Photo-assisted homoepitaxial growth of ZnS by molecular beam epitaxy Kitagawa, M.; Tomomura, Y.; Nakanishi, K. Journal of Crystal Growth, Vol. 101, Issue 1-4 https://doi.org/10.1016/0022-0248(90)90935-E	journal	April 1990
Particle bombardment effects on thin‐film deposition: A review Mattox, D. M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, Issue 3 https://doi.org/10.1116/1.576238	journal	May 1989
Surface morphology of GaAs during molecular beam epitaxy growth: Comparison of experimental data with simulations based on continuum growth equations Ballestad, A.; Ruck, B. J.; Schmid, J. H. Physical Review B, Vol. 65, Issue 20 https://doi.org/10.1103/PhysRevB.65.205302	journal	April 2002
Molecular beam epitaxy growth of GaAs1−xBix Tixier, S.; Adamcyk, M.; Tiedje, T. Applied Physics Letters, Vol. 82, Issue 14 https://doi.org/10.1063/1.1565499	journal	April 2003
Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs Preobrazhenskii, V. V.; Putyato, M. A.; Pchelyakov, O. P. Journal of Crystal Growth, Vol. 201-202 https://doi.org/10.1016/S0022-0248(98)01308-6	journal	May 1999
Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxy Asahi, H.; Hisaka, T.; Kim, S. G. Applied Physics Letters, Vol. 61, Issue 9 https://doi.org/10.1063/1.107714	journal	August 1992
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs Ohno, H.; Shen, A.; Matsukura, F. Applied Physics Letters, Vol. 69, Issue 3 https://doi.org/10.1063/1.118061	journal	July 1996
Light-induced effects on the growth and doping of wide-bandgap II-VI compounds Marfaing, Y. Semiconductor Science and Technology, Vol. 6, Issue 9A https://doi.org/10.1088/0268-1242/6/9A/010	journal	September 1991
Growth of III-V compounds on vicinal planes by molecular beam epitaxy Joyce, B. A.; Neave, J. H.; Zhang, J. Semiconductor Science and Technology, Vol. 5, Issue 12 https://doi.org/10.1088/0268-1242/5/12/001	journal	December 1990

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