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Title: Direct Observation of the E_ Resonant State in GaAs1-xBix

Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence band edge in GaAs1-xBix. Our results provide key new insights for clarifying the mechanisms by which isovalent impurities alter the bandstructure of the host semiconductor.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 2469-9950
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Physical Review B; Journal Volume: 92; Journal Issue: 24; Related Information: Physical Review, B. Condensed Matter and Materials Physics
American Physical Society (APS)
Research Org:
NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS GaAsBi; resonant level; semiconductor optical properties